| Both sides previous revisionPrevious revisionNext revision | Previous revision |
| papers [2026/02/24 20:47] – [Table] vagelis | papers [2026/04/27 14:26] (current) – [Table] yaxin |
|---|
| **Conventional NbN/NbTiN fabrication:** | **Conventional NbN/NbTiN fabrication:** |
| |
| ^ Title ^ Author ^ Comment ^ Link ^ Keywords ^ | ^ Title ^ Author ^ Comment ^ Link ^ Keywords ^ |
| | Development of superconducting single particle detector transition edge sensor | Carlo Pepe | Pg. 74 Interesting diagram on laser experiment, Pg. 96 new fabrication ideas for insulating layers | [[https://iris.inrim.it/retrieve/handle/11696/82079/3f2fde4f-2860-4967-abac-7ede058ca199/Phd_thesis_C_pepe_2024.pdf|Link]] | Characterization, fabrication | | | Development of superconducting single particle detector transition edge sensor | Carlo Pepe | Pg. 74 Interesting diagram on laser experiment, Pg. 96 new fabrication ideas for insulating layers | [[https://iris.inrim.it/retrieve/handle/11696/82079/3f2fde4f-2860-4967-abac-7ede058ca199/Phd_thesis_C_pepe_2024.pdf|Link]] | Characterization, fabrication | |
| | | Properties of NbxTi(1-x)N thin films deposited\\ on 300 mm silicon wafers for upscaling\\ superconducting digital circuits. | Daniel Pérez Lozano | Explains the stiochiometry differences between two samples and different positions within the substrate, which ok we can simulate but shouldn't be an issue | [[https://arxiv.org/pdf/2311.09772|Link]] | | |
| | | Superconducting properties and chemical composition of\\ NbTiN thin films with different thickness | L. Zhang | Page 3 has the value for the NbTiN lattice constant which appears to be 0.435nm, so the so the sim should use triple that which turns out to be 1.3nm | [[https://watermark02.silverchair.com/122603_1_online.pdf?token=AQECAHi208BE49Ooan9kkhW_Ercy7Dm3ZL_9Cf3qfKAc485ysgAABZkwggWVBgkqhkiG9w0BBwagggWGMIIFggIBADCCBXsGCSqGSIb3DQEHATAeBglghkgBZQMEAS4wEQQMpdvVgpzms3W0W3L3AgEQgIIFTCoPu4ZWcVh5x7GSxt37R76PqUfksQEVqeT8vfInZNFh2rWtWINd57EP35Nz3mYnNqSsHeVrmRSAVRnbvrIAV3tAp7rUybn4Pp7Hrmb649rBx_sqIJLZb4zJStmB8KUZp51rIIR31onRHDDKdSZEB-7lU39Q6F7j0v0aXvUcEEaO7eqsYtcmIkp1q8qhLRoqyalkMnZZS58aI4Arczcnq6337J-cRwBovZMBetJl8ry4wyXQYmSzojfWgZOh1pQk6BaXi9q-YwrQNu0NCzivfEsAqwGsgBUtmMVLdqVHH_4lvEBo4DPa35iB2EgGX4g6zpgIuL3hpQMIfF7cO8AIoqmNHjZTGG-F9-mVbssl70QqLzUT8o22bqxMVDW0oLjsAytOFtkPl3ZKM-Nsl6IZk7uoul1D3e6PRYMfBjTuy-58OZ1mingcUU64p6jOdjuO63ogwMIy-C2NDMph-vpd2_Jbhj--hG4Sj5tn4-bKeSseT6phBabO2t7_RfI3M4IkO44Ww_ES5a5SsbKvOaP6XxwErG4wnt19l4WzM5WJLKJ-LWF8koOg-b-ZbJV3yxTqxJzpBrepsb3RtxrFvJluPoDVAKrG9gjzm9cUqihQhXdQkTVyzntg_icsIIQQOdNPYbYLIXF4fxc3dFkSErOMetLlTUpXXcUHOJUBNGc5P2euI93hA83jqGkOL_-LS2dFNM9YgOLtFXJYnR5sO_8wpdW0ie8d1UwnywW-6qvBplOUvY3LR-G1G3ojIJScGE41PWqPWjxx2wdeQ0u50A5UtoR41cAtkLbsRgc1-ups1zaICHeq11BZaXkKEiHUsFLrMHqeoucIjvpPzo2BObpRquNO62PlOYhHJqtXt16V1m8mFAe8XuRPZ1zizuH6XqYVbSd8oNRe3-P13GDrm7pMLbgd8c_Itqhl5MjPC4ChwXSFMjK8jI7nE7z8nEfPULF6XlsA3JiOof7NFx5e8ZgSFafc69kcHeah6oHizRLPXy6Iuzs3GX6q-3YLnpi2xefShFOgSYRtdCAAjY1oYdU9RzYRqkhzIocIV8ezMSTah8llViemG0lNRrRgU2f3pdlwu-UILGSAnOV0OvhmfmGx1X1b70vfydsaC1RDnMpf5maT9KvtmZFvsHGVL0rpCNA8XDz8ddBUmjjQzLMYnwuE0ko7elBkpv2vNOxC3Y3jqZjuvIjcYSCipuxeZA5c9wc957AApbFwCyshYikbvh30IBqfS8Idk-Ail441rSMFwocJD8FZU-kURRgI-xB776J3srCZkXmV7Wl2WRAwf8yImF77rzI-o6kq1m8NlrDyt87J3-v_dqvOa985NJl2NqJJzGT7VSXlM0r9fc3d8GKvDwgXiCqdJJiPmBt5aUXmbVbZRJwOVTaZSw6L4AFY4LNmoNM4I2hZnh7rv4H2yZxP5mEd_1bLA-0-XAeD1hfzzwAuMiEsr_HKh9H_8NYCrYc--UtdF1XMIfsB_54KoO-1555g4C0itqJInfLV2RMQ-9QVn9sNiFL2G03tUjBqT6Tix4P8TIKAfJIiyymqHy0e7a-SDQGeJP0r-wtQRR1GsUI4_R592NZKokWcouxBCYxfnxBn7PNrfmvmaB3vNSRz059E-mwgWQsllGI6c0EwE41POuxo95B225iRgy61IlRdNdoImhJ7K72Ka8B9L1DiaW2pJiiExAqvyKE_QyY2EctlEPkzBJCFwZilsfsTaxNczWWzcWkundFUF8BnfxFuh_xm7i9nop_o4OFhGwBmV3zZMb7i5ZXbbYKeZ_L-qjFh32ZaHcs1n8WPJVgueAZ|Link]] | Lattice constant for NbTiN | |
| |
| **Electronics Design and Modeling** | **Electronics Design and Modeling** |
| | A review of GaN HEMT broadband power amplifiers | K. Husna Hamza, D. Nirmal | GaN HEMPT application on quantum sensors | [[https://www.sciencedirect.com/science/article/pii/S1434841119321892/|Link]] | Gallium Nitrate, Broadband amplifier, Cryogenic electronics | | | A review of GaN HEMT broadband power amplifiers | K. Husna Hamza, D. Nirmal | GaN HEMPT application on quantum sensors | [[https://www.sciencedirect.com/science/article/pii/S1434841119321892/|Link]] | Gallium Nitrate, Broadband amplifier, Cryogenic electronics | |
| | Indium Phosphide (InP) HEMTs | ESA Collaboration | InP HEMPT application on quantum computing and sensing | [[https://mwe.ee.ethz.ch/research/HEMT/InPHEMT.html|Link]] | Indium Phosphate high bandwidth transitor | | | Indium Phosphide (InP) HEMTs | ESA Collaboration | InP HEMPT application on quantum computing and sensing | [[https://mwe.ee.ethz.ch/research/HEMT/InPHEMT.html|Link]] | Indium Phosphate high bandwidth transitor | |
| | |
| | **Simulation - GEANT4 - Drude-Lorentz approximation** |
| | |
| | ^ Title ^ Author ^ Comment ^ Link ^ Keywords ^ |
| | | An implementation of ionisation energy loss in very thin absorbers for the GEANT4 simulation package | J. Apostolakis, S Giani, L. Urban, M. Maire, A. V. Bagulya, V. M. Grichine | The paper corresponding to the Geant4 PAI model, including its main formula structures. | [[https://www.sciencedirect.com/science/article/abs/pii/S0168900200004575|Link]] | PAI model theory, Geant 4 PAI | |
| | | Approximation methods to calculate straggling functions | Hans Bichsel | Covers analytical methods for calculating the straggling function, including the approach used in the PAI model. While higher-precision methods exist, they offer only marginal (5%) improvements. | [[https://www.sciencedirect.com/science/article/abs/pii/S0168900206007972|Link]] | Straggling functions, Ionization models | |
| | | Spectral Distribution of Atomic Oscillator Strengths | U. Fano, J. W. Cooper | Theoretical foundation for the normalization method used in the PAI model. | [[https://journals.aps.org/rmp/abstract/10.1103/RevModPhys.40.441|Link]] | Ionization cross-Section, normalization, sum rule, PAI model | |
| | | A simple method for realistic estimation of the most probable energy loss in thin gas layers | V. M. Grishin, G. I. Merson | Initial conceptual idea of what was later developped and implemented as the PAI model. | [[https://www.sciencedirect.com/science/article/pii/0168900289901903|Link]] | Energy deposition in thin layers | |
| | | Validation of cross sections for Monte Carlo simulation of the photoelectric effect | M. Cheol Han et al. | Compares different data sets used in Geant4, Sandia Table is one of them. | [[https://arxiv.org/abs/1601.06514|Link]] | Sandia Table, PAI model | |
| | | Complementary Metal–Oxide–Semiconductor Compatible Deposition of Nanoscale Transition-Metal Nitride Thin Films for Plasmonic Applications | R. Bower et al. | Experimental measurement of Drude-Lorentz oscillator parameters of TiN, NbN and NbTiN on different substrates. Values available in supporting info. | [[https://pubs.acs.org/doi/10.1021/acsami.0c10570|Link]] | NbTiN, Drude-Lorentz, dielectric | |
| | | Introduction to the PAI model | I. B. Smirnov | Short introduction and description of the PAI model and it's application. | [[https://indico.cern.ch/event/911950/contributions/3898109/attachments/2062395/3460176/Intro_PAI_wc.pdf|lINK]] | PAI model, Ionization Cross-Section | |
| | | Recent progress of GEANT4 electromagnetic physics for LHC and other applications | A Bagulya et al. | A general description on ionization simulation, in which mentioned how to register PAI model via macro file. | [[https://iopscience.iop.org/article/10.1088/1742-6596/898/4/042032|Link]] | Geant4, PAI model, attach models | |
| | | Analytical Approximations for X-Ray Cross Sections Ill | Frank Biggs, Ruth Lighthill | Original Sandia Table, in which gives the Biggs-Lighhill parameterisation. It was often mis-cited as “SAND 87-0070, 1990, 35p,” but the official report record identifies it as SAND-87-0070, Aug. 1988. | [[https://www.osti.gov/servlets/purl/7124946/|Link]] | PAI model, Biggs-Lighthill parameters, Sandia Table | |
| |
| **Theory - Time Dependent Ginsburg-Landau** | **Theory - Time Dependent Ginsburg-Landau** |
