Substrate

This page shows you information about the substrate of the CCD's. The table below shows the specific specification of our CCD's:

Specification Value
Name 6“ N HiRes (100) > 1000
Product type FZ silicon - HiRes Wafer
Wafer finish frontside/backside Polished/ Etched Acid
Wafer orientation (1-0-0) ±0.5 deg
Diammeter (mm) 150,00 ±0,20
Primary flat 57,5 ± 2,5 mm; Orientation: (1-10) +/- 1 Deg
Secondary flat none
Doping N-type Phosphorous
Resistivity (Ohm-cm) >10'000,0
Thickness (μm) 675 ± 15,00
Total Thickness variation (TTV) (μm) <5
Bow (μm) <30
Warp (μm) <30
Product Analysis Values
Resistivity minimum (Ohm-cm) N.A.
Thickness [average ± std. dev] (μm) 676 ± 0,16
TTV [average ± std. dev] (μm) 1,1 ± 0,13
Bow [average ± std. dev] (μm) 1,9 ± 0,64
Warp [average ± std. dev] (μm) 9,2 ± 0,51
Measeruments (taken at 1MHz) Results/ Conclusion
Carrier concentration at 295K N ∼ 7,24 * 10↑(11) cm↑(-3)
Area 1,92 * 10↑(-2) cm↑(2)
N type sample
Very low depletion voltage small reverse bias required

The presence of various other elements at various depths (as shown above), changes also the resistivity of our CCD's, the measured resisitivity are shown in the graph to the left side.


The measured resistivity graphs leads to the following graph of carriers.