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substrate
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| substrate [2024/09/18 14:39] – simon | substrate [2024/09/19 14:02] (current) – simon | ||
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| This page shows you information about the substrate of the CCD's. | This page shows you information about the substrate of the CCD's. | ||
| + | The table below shows the specific specification of our CCD's: | ||
| + | ^ Specification | ||
| + | | Name | 6" N HiRes (100) > 1000 | | ||
| + | | Product type | FZ silicon - HiRes Wafer | | ||
| + | | Wafer finish frontside/ | ||
| + | | Wafer orientation | ||
| + | | Diammeter (mm) | 150,00 ±0, | ||
| + | | Primary flat | 57,5 ± 2,5 mm; Orientation: | ||
| + | | Secondary flat | none | | ||
| + | | Doping | ||
| + | | Resistivity (Ohm-cm) | ||
| + | | Thickness (μm) | 675 ± 15,00 | | ||
| + | | Total Thickness variation (TTV) (μm) | <5 | | ||
| + | | Bow (μm) | < | ||
| + | | Warp (μm) | < | ||
| + | ^ Product Analysis | ||
| + | | Resistivity minimum (Ohm-cm) | ||
| + | | Thickness [average ± std. dev] (μm) | 676 ± 0,16 | | ||
| + | | TTV [average ± std. dev] (μm) | 1,1 ± 0,13 | | ||
| + | | Bow [average ± std. dev] (μm) | 1,9 ± 0,64 | | ||
| + | | Warp [average ± std. dev] (μm) | 9,2 ± 0,51 | | ||
| + | ^ Measeruments (taken at 1MHz) ^ Results/ Conclusion | ||
| + | | Carrier concentration at 295K | N ∼ 7,24 * 10↑(11) cm↑(-3) | ||
| + | | Area | 1,92 * 10↑(-2) cm↑(2) | ||
| + | | N type sample | ||
| + | | Very low depletion voltage | ||
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substrate.1726663149.txt.gz · Last modified: by simon
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